, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BLX98 u.h.f. linear power transistor n-p-n silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of television transposers and transmitters in band iv-v. features: ? diffused emitter ballasting resistors for an optimum temperature profile; ? gold metallization ensures excellent reliability. the transistor has a %" capstan envelope with a moulded cap. all leads are isolated from the stud. quick reference data r.f. performance in linear amplifier mode of operation class-a class-a ^vision mhz 860 860 vce v 26 25 ?c ma 850 850 th c 70 70 dim* db -60 -60 p * ro sync w > 3,5 typ. 4,0 gp db > 5,0 typ. 5,5 * three-tone test method (vision carrier ?8 db, sound carrier ?7 db, sideband signal ?16 db), zero db corresponds to peak sync level. mechanical data fig. 1 sot-48/2. * dimensions in mm (4x) 1,52 9,7 5 max 25 min torque on nut: min. 0,75 nm (7,5 kg cm) max. 0,85 nm (8,5 kg cm) diameter of clearance hole in heatsink: max. 4,2 mm. mounting hole to have no burrs at either end. de-burring must leave surface flat; do not chamfer or countersink either end of hole. when locking is required an adhesive is preferred instead of a lock washer. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
BLX98 ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (peak value); vqe = 0 open base emitter-base voltage (open collector) collector current d.c. ic (peak value); f> 1 mhz icm total power dissipation at tn = 70 c ptot max. max. max. 50 v 27 v 3,5 v storage temperature junction temperature 7z67289.2 (1) second breakdown limit (independent of temperature. fig. 2 d.c. soar. 'stg 40 ptot (w) 30 max, 2 a max. 4 a max. 21,5 w -65 to-1-200 c max. 200 c 7z88300 20 10 50 th fig. 3 power derating curve vs. temperature. thermal resistance (dissipation = 21,25 w; tmb = 82,75 oc, i.e. th = from junction to mounting base rthj-mb from mounting base to heatsink rtn mb-n 5,45 k/w ,6 k/w
. BLX98 characteristics tj = 25 c unless otherwise specified collector-emitter breakdown voltage vbe = 0;lc=10ma open base; iq ? 25 ma emitter-base breakdown voltage open collector; ig = 5 ma d.c. current gain* 1c = 860 ma; vce = 25 v collector-emitter saturation voltage* ic= 500ma; ib = 100ma transition frequency at f = 500 mhz** -ie = 850 ma; vrjb = 25 v collector capacitance at f = 1 mhz v(br)ces v(br)ceo v(br)ebo hfe vcesat > > > > typ. 50 v 27 v 3,5 v 15 40 typ. 0,25 v typ. 2,5 ghz feedback capacitance at f ? 1 mhz ic= 50ma; vce = 25 v collector-stud capacitance 3 10 BLX98 7z8830i rthj-h (k/w) 25 ptot(w) 35 fig. 4 maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (rfn mb.h - 0,6 k/w.) example nominal class-a operation (without r.f. signal): vce = 25 v; \q = 850 ma; tn = 70 c. fig. 4 shows: rthj-h max- 6,05 k/w tj max. 200 c typical device: rtf, j.n typ. 5,35 k/w tj typ. 183c
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